View PMEM4020ND_4558796.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D302
PMEM4020ND NPN transistor/Schottky-diode module
Product data sheet 2003 Nov 10
NXP Semiconductors
Product data sheet
NPN transistor/Schottky-diode module
FEATURES * 600 mW total power dissipation * High current capability * Reduces required PCB area * Reduced pick and place costs * Small plastic SMD package. Transistor: * Low collector-emitter saturation voltage. Diode: * Ultra high-speed switching * Very low forward voltage * Guard ring protected. APPLICATIONS * DC-to-DC converters * Inductive load drivers * MOSFET drivers. DESCRIPTION Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier diode with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. PNP complement: PMEM4020PD. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEM4020ND - DESCRIPTION plastic surface mounted package; 6 leads
Marking code: B6.
handbook, halfpage 6
PMEM4020ND
PINNING PIN 1 2 3 4 5 6 emitter not connected cathode anode base collector DESCRIPTION
5
4
4 5 1 3 6
1
2
3
MGU865
Fig.1
Simplified outline (SOT457) and symbol.
VERSION SOT457
2003 Nov 10
2
NXP Semiconductors
Product data sheet
NPN transistor/Schottky-diode module
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL NPN transistor VCBO VCEO VEBO IC collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) open emitter open base open collector note 1 note 2 note 3 Ts 55 C; note 4 ICM IBM Ptot peak collector current peak base current total power dissipation Tamb 25 C; note 1 Tamb 25 C; note 2 Tamb 25 C; note 3 Ts 55 C; note 4 Tj VR IF IFSM Ptot junction temperature Schottky barrier diode continuous reverse voltage continuous forward current non-repetitive peak forward current total power dissipation t = 8.3 ms square wave Tamb 25 C; note 1 Tamb 25 C; note 2 Tamb 25 C; note 3 Ts 55 C; note 4 Tj Ptot Tstg Tamb Notes junction temperature note 2 Tamb = 25 C; note 2 note 2 Combined device total power dissipation storage temperature operating ambient temperature - -65 -65 - - - - - - - - - - - - - - - - - - - - - - PARAMETER CONDITIONS
PMEM4020ND
MIN.
MAX.
UNIT
40 40 5 0.95 1.30 1.65 2.0 3 1 295 400 500 1 000 150
V V V A A A A A A mW mW mW mW C
20 1 5 295 400 500 1 000 150
V A A mW mW mW mW C
600 +150 +150
mW C C
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pads for collector and cathode both 1 cm2. 3. Device mounted on a ceramic printed-circuit board, single-sided copper; tinplated; standard footprint. 4. Solder point of collector or cathode tab.
2003 Nov 10
3
NXP Semiconductors
Product data sheet
NPN transistor/Schottky-diode module
THERMAL CHARACTERISTICS SYMBOL Single device Rth j-s Rth j-a thermal resistance from junction to solder point thermal resistance from junction to ambient in free air; notes 1 and 2 in free air; notes 1 and 3 in free air; notes 1 and 4 in free air; notes 1 and 5 Combined device Rth j-a Notes thermal resistance from junction to ambient in free air; notes 1 and 3 PARAMETER CONDITIONS
PMEM4020ND
VALUE
UNIT
95 250 315 425
K/W K/W K/W K/W
208
K/W
1. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF (AV) rating will be available on request. 2. Solder point of collector or cathode tab. 3. Device mounted on a ceramic printed-circuit board; single-sided copper; tinplated; standard footprint. 4. Device mounted on a FR4 printed-circuit board, single-sided copper; tinplated; mounting pad for collector and cathode 1 cm2/each. 5. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint for SOT457.
2003 Nov 10
4
NXP Semiconductors
Product data sheet
NPN transistor/Schottky-diode module
ELECTRICAL CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL NPN transistor ICBO ICEO IEBO hFE collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current current gain (DC) VCB = 40 V; IE = 0 VCB = 40 V; IE = 0; Tamb = 150 C VCE = 30 V; IB = 0 VEB = 5 V; IC = 0 VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A VCE = 5 V; IC = 2 A; note 1 VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA IC = 2 A; IB = 200 mA VBEsat RCEsat VBEon fT Cc base-emitter saturation voltage equivalent on-resistance base-emitter turn-on voltage transition frequency collector capacitance IC = 1 A; IB = 100 mA IC = 1 A; IB = 100 mA; note 1 VCE = 5 V; IC = 1 A IC = 50 mA; VCE = 10 V; f = 100 MHz VCB = 10 V; IE = 0; ie = 0; f = 1 MHz - - - - 300 300 200 75 - - - - - - - 150 - PARAMETER CONDITIONS MIN.
PMEM4020ND
TYP. - - - - - - - - - - - - - 150 - - -
MAX.
UNIT
100 50 100 100 - 900 - - 75 100 190 400 1.2 190 1.1 - 10
nA A nA nA
mV mV mV mV V m V MHz pF
Schottky barrier diode VF continuous forward voltage see Fig.2; note 1 IF = 10 mA IF = 100 mA IF = 1000 mA IR reverse current see Fig.3; note 1 VR = 5 V VR = 8 V VR = 15 V Cd Note 1. Pulse test: tp 300 s; 0.02. diode capacitance VR = 5 V; f = 1 MHz; see Fig.4 - - - - 5 7 10 19 10 20 50 25 A A A pF - - - 240 300 480 270 350 550 mV mV mV
2003 Nov 10
5
NXP Semiconductors
Product data sheet
NPN transistor/Schottky-diode module
GRAPHICAL DATA
103 handbook, halfpage IF (mA) 102
MLE230
PMEM4020ND
105 handbook, halfpage IR (A)
(1)
MHC312
104
103
(2)
(1)
(2)
(3)
102
(3)
10
10
1
0
100
200
300
400 500 VF (mV)
1
0
5
10
15
20 VR (V)
25
Schottky barrier diode. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Schottky barrier diode. (1) Tamb = 125 C. (2) Tamb = 85 C. (3) Tamb = 25 C.
Fig.2
Forward current as a function of forward voltage; typical values.
Fig.3
Reverse current as a function of reverse voltage; typical values.
handbook, halfpage handbook, halfpage
1000
MHC077
80
MHC313
hFE
(1)
Cd (pF) 60
800
600
(2)
40
400
(3)
200 20 0 10-1 0 0 5 10 15 VR (V) 20
NPN transistor; VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
1
10
102
103 104 IC (mA)
Schottky barrier diode; f = 1 MHz; Tamb = 25 C.
Fig.4
Diode capacitance as a function of reverse voltage; typical values.
Fig.5
DC current gain as a function of collector current; typical values.
2003 Nov 10
6
NXP Semiconductors
Product data sheet
NPN transistor/Schottky-diode module
PMEM4020ND
handbook, halfpage
10
MHC078
103 handbook, halfpage VCEsat (mV)
MHC079
VBE (V)
102
(1)
1
(1) (2)
(2) (3)
10
(3)
10-1 10-1
1
10
102
103 104 IC (mA)
1
1
10
102
103
IC (mA)
104
NPN transistor; VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
NPN transistor; IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.6
Base-emitter voltage as a function of collector current; typical values.
Fig.7
Collector-emitter saturation voltage as a function of collector current; typical values.
102 handbook, halfpage RCEsat ()
MHC080
handbook, halfpage
400
MHC081
fT (MHz) 300
10
200
1
(1) (2) (3)
100
10-1 10-1
1
10
102
103 104 IC (mA)
0 0 200 400 600 800 1000 IC (mA)
NPN transistor; IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C. NPN transistor; VCE = 10 V.
Fig.8
Equivalent on-resistance as a function of collector current; typical values.
Fig.9
Transition frequency as a function of collector current.
2003 Nov 10
7
NXP Semiconductors
Product data sheet
NPN transistor/Schottky-diode module
APPLICATION INFORMATION
PMEM4020ND
handbook, halfpage
VCC
V handbook, halfpageIN
VOUT
CONTROLLER Rload
MLE231 MDB577
IN
Fig.10 DC-to-DC converter.
Fig.11 Inductive load driver (relays, motors, buzzers) with free-wheeling diode.
2003 Nov 10
8
NXP Semiconductors
Product data sheet
NPN transistor/Schottky-diode module
PACKAGE OUTLINE
PMEM4020ND
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A A1 c
1
2
3
Lp
e
bp
wM B detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.1 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT457
REFERENCES IEC JEDEC EIAJ SC-74
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 01-05-04
2003 Nov 10
9
NXP Semiconductors
Product data sheet
NPN transistor/Schottky-diode module
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production DEFINITION
PMEM4020ND
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
2003 Nov 10
10
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R76/01/pp11 Date of release: 2003 Nov 10 Document order number: 9397 750 11906

▲Up To Search▲

Price & Availability of PMEM4020ND

	To Download PMEM4020ND Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .